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dc.contributor.authorOzdemir, Resul
dc.contributor.authorChoi, Donghee
dc.contributor.authorOzdemir, Mehmet
dc.contributor.authorKwon, Guhyun
dc.contributor.authorKim, Hyekyoung
dc.contributor.authorSen, Unal
dc.contributor.authorKim, Choongik
dc.contributor.authorUsta, Hakan
dc.date.accessioned2021-07-30T07:20:37Z
dc.date.available2021-07-30T07:20:37Z
dc.date.issued2017en_US
dc.identifier.issn2050-7526
dc.identifier.issn2050-7534
dc.identifier.urihttps://doi.org/10.1039/c6tc05079d
dc.identifier.urihttps://hdl.handle.net/20.500.12573/887
dc.descriptionH. U. and R. O. acknowledges support from AGU-BAP (FYL-2016-65). H. U. acknowledges support from Turkish Academy of Sciences, The Young Scientists Award Program (TUBA-GEBIP 2015) and The Science Academy, Young Scientist Award Program (BAGEP 2014). C. K. acknowledges support from Development of Space Core Program (2016M1A3A3A02016885) and Basic Science Research Program through the National Research Foundation of Korea (NRF) (NRF-2014R1A1A1A05002158).en_US
dc.description.abstractThe design and development of novel ambipolar semiconductors is very crucial to advance various optoelectronic technologies including organic complementary (CMOS) integrated circuits. Although numerous high-performance ambipolar polymers have been realized to date, small molecules have been unable to provide high ambipolar performance in combination with ambient-stability and solution-processibility. In this study, by implementing highly p-electron deficient, ladder-type IFDK/IFDM acceptor cores with bithiophene donor units in D-A-D pi-architectures, two novel small molecules, 2OD-TTIFDK and 2OD-TTIFDM, were designed, synthesized and characterized in order to achieve ultralow band-gap (1.21-1.65 eV) semiconductors with sufficiently balanced molecular energetics for ambipolarity. The HOMO/LUMO energies of the new semiconductors are found to be -5.47/-3.61 and -5.49/-4.23 eV, respectively. Bottom-gate/top-contact OFETs fabricated via solution-shearing of 2OD-TTIFDM yield perfectly ambient stable ambipolar devices with reasonably balanced electron and hole mobilities of 0.13 cm(2) V-1 s(-1) and 0.01 cm(2) V-1 s(-1), respectively with I-on/I-off ratios of similar to 10(3)-10(4), and 2OD-TTIFDK-based OFETs exhibit ambipolarity under vacuum with highly balanced (mu(e)/mu(h) similar to 2) electron and hole mobilities of 0.02 cm(2) V-1 s(-1) and 0.01 cm(2) V-1 s(-1), respectively with I-on/I-off ratios of similar to 10(5)-10(6). Furthermore, complementary-like inverter circuits were demonstrated with the current ambipolar semiconductors resulting in high voltage gains of up to 80. Our findings clearly indicate that ambient-stability of ambipolar semiconductors is a function of molecular orbital energetics without being directly related to a bulk p-backbone structure. To the best of our knowledge, considering the processing, charge-transport and inverter characteristics, the current semiconductors stand out among the best performing ambipolar small molecules in the OFET and CMOS-like circuit literature. Our results provide an efficient approach in designing ultralow band-gap ambipolar small molecules with good solution-processibility and ambient-stability for various optoelectronic technologies, including CMOS-like integrated circuits.en_US
dc.description.sponsorshipAGU-BAP FYL-2016-65 Turkish Academy of Sciences Science Academy, Young Scientist Award Program (BAGEP) Development of Space Core Program through National Research Foundation of Korea (NRF) 2016M1A3A3A02016885 Basic Science Research Program through National Research Foundation of Korea (NRF) NRF-2014R1A1A1A05002158en_US
dc.language.isoengen_US
dc.publisherROYAL SOC CHEMISTRYTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDen_US
dc.relation.isversionof10.1039/c6tc05079den_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectTHIN-FILM TRANSISTORSen_US
dc.subjectLIGHT-EMITTING TRANSISTORSen_US
dc.subjectHIGH-PERFORMANCEen_US
dc.subjectCHARGE-TRANSPORTen_US
dc.titleUltralow bandgap molecular semiconductors for ambient-stable and solution-processable ambipolar organic field-effect transistors and inverters Byen_US
dc.typearticleen_US
dc.contributor.departmentAGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümüen_US
dc.identifier.volumeVolume 5 Issue 9 Page 2368-2379en_US
dc.relation.journalJOURNAL OF MATERIALS CHEMISTRY Cen_US
dc.relation.publicationcategoryMakale - Uluslararası - Editör Denetimli Dergien_US


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