Logarithmic organic photodetectors
Özet
A novel photodetector of Al/GO:C8-BTBT/n-Si/Au with various graphene oxide (GO) contents has been
investigated. The electrical properties of the diodes were characterized by current–voltage (I–V) and
capacitance–voltage (C–V) measurements. The values of barrier height, ideality factor, and series
resistance of the diodes were determined from I–V characteristic curves by using Norde’s equations. The
photocurrent properties of the diode were studied under various illumination intensities. The
photoconducting mechanism of the diodes is controlled by the traps. The photoresponse properties
of the diodes are increased with GO contents. The obtained results indicate that graphene oxide doped
2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene/n-Si heterojunctions can be used as a photodetector for optoelectronic applications.
