Selective Remanent Ambipolar Charge Transport in Polymeric Field-Effect Transistors For High-Performance Logic Circuits Fabricated in Ambient
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Erişim
info:eu-repo/semantics/openAccessTarih
2014Yazar
Fabiano, SimoneUsta, Hakan
Forchheimer, Robert
Crispin, Xavier
Facchetti, Antonio
Berggren, Magnus
Üst veri
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Ambipolar polymeric field-effect transistors can be programmed into a p- or n-type mode by using the remanent polarization of a ferroelectric gate insulator. Due to the remanent polarity, the device architecture is suited as a building block in complementary logic circuits and in CMOS-compatible memory cells for non-destructive read-out operations.