Selective Remanent Ambipolar Charge Transport in Polymeric Field-Effect Transistors For High-Performance Logic Circuits Fabricated in Ambient
![Thumbnail](/xmlui/bitstream/handle/20.500.12573/1380/Advanced%20Materials%20-%202014%20-%20Fabiano%20-%20Selective%20Remanent%20Ambipolar%20Charge%20Transport%20in%20Polymeric%20Field%e2%80%90Effect%20Transistors.pdf.jpg?sequence=4&isAllowed=y)
View/ Open
Access
info:eu-repo/semantics/openAccessDate
2014Author
Fabiano, SimoneUsta, Hakan
Forchheimer, Robert
Crispin, Xavier
Facchetti, Antonio
Berggren, Magnus
Metadata
Show full item recordAbstract
Ambipolar polymeric field-effect transistors can be programmed into a p- or n-type mode by using the remanent polarization of a ferroelectric gate insulator. Due to the remanent polarity, the device architecture is suited as a building block in complementary logic circuits and in CMOS-compatible memory cells for non-destructive read-out operations.